EX6: Epitaxial growth of the group-IV semiconductor materials

Epitaxial growth of the group-IV semiconductor materials (EX6)

Module convenor: Dr Maksym Myronov

Module aims:

Most of modern electronic, photonic, spintronic, thermoelectric and photovoltaic devices are fabricated of thin film semiconductor materials, which are epitaxially grown on a substrate. Silicon-based heterostructures of group-IV semiconductor materials have come a long way from the discovery of strain as a new and essential parameter for band structure engineering to the present state of electron and hole mobilities, which surpass those achieved in the traditional Si/SiO2 material combination by more than an order of magnitude and are rapidly approaching the best III–V heteromaterials. In particular, Silicon-based devices dominate in nowadays electronic, photonic and photovoltaic devices, and have a potential to achieve the same domination in the spintronic and thermoelectric ones in a future. One of the best and brightest examples of the Si based devices is the CMOS, – Complementary Metal Oxide Semiconductor. As CMOS dimensional scaling has progressed along the Moore’s Law path for the last 40 years, increasing transistor performance year over year has become more difficult. To this extent, new group-IV materials have become an integral component for realizing increased transistor drive current. Epitaxial deposition on the silicon substrate has proliferated within MOSFET structures and become a key enabler to increased transistor performance. The selective growth of SiGe films has been utilized in pMOS transistors for source/drain uniaxial strain engineering while the selective growth of silicon has been utilized in DRAM as a method to reduce parasitic resistance.

The proposed lecture course covers all aspects associated with fundamentals of semiconductor thin films growth by mainstream research and industrial epitaxial growth techniques. Growth of thick, up to 10’s µm, and thin, down to one monolayer (i.e. ~ 0.1 nm), strained and relaxed Si, Ge, SiGe, SiC, GeSn and SiGeSn epilayers and characterization techniques suitable for their characterization will be reviewed. Such epilayers are core materials for conventional and state of the art low-dimensional structures like Quantum Wells, Superlattices, Quantum Dots, Nanowiers and others. Formation of recently discovered Graphene material on different substrates will be reviewed as well. Application examples of the epilayers in various existing and potentially new devices will accompany discussion and review of each material. The course consists of ten lectures titles of which are outlined below.

Lectures list:

  1. Introduction: demand for epilayers in nowadays and future semiconductor devices
  2. Fundamentals of semiconductor thin films growth
  3. Epitaxial growth facilities, equipment and supplies
  4. Techniques suitable for characterization of epitaxial layers
  5. Epitaxial growth techniques: Physical Vapour Deposition
  6. Epitaxial growth techniques: Chemical Vapour Deposition
  7. Epitaxial growth of Si, Ge and SiGe structures
  8. Epitaxial growth of GeSn and SiGeSn structures
  9. Epitaxial growth of SiC structures
  10. Formation of Graphene on different substrates
Duration: 
2h
Academic year: 
2011-2012
Starts: 
08/11/2011 - 15:00